dss8110y document number: ds31679 rev. 2 - 2 1 of 5 www.diodes.com october 2010 ? diodes incorporated dss8110y 100v low v ce(sat) npn surface mount transistor features ? epitaxial planar die construction ? ideal for low power amplification and switching ? complementary pnp type available (dss9110y) ? ultra small surface mount package ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free, "green device" (note 2) mechanical data ? case: sot-363 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? weight: 0.006 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel DSS8110Y-7 zn5 7 8mm 3,000 notes: 1. no purposefully added lead. 2. diode?s inc.?s ?green? policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2010 2011 2012 2013 2014 2015 code x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view device symbol pin-out top sot-363 zn5 = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) zn5 ym cce ccb c b e
dss8110y document number: ds31679 rev. 2 - 2 2 of 5 www.diodes.com october 2010 ? diodes incorporated dss8110y maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5 v collector current - continuous i c 1 a peak pulse collector current i cm 3 a base current ? continuous i b 0.3 a thermal characteristics characteristic symbol value unit power dissipation (note 4) @ t a = 25 c p d 625 mw thermal resistance, junction to ambient (note 4) @ t a = 25 c r ja 200 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 4. device mounted on fr-4 pcb, with minimum recommended pad layout. 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 50 100 150 200 t , ambient temperature ( c) a fig. 1 power dissipation vs. ambient temperature p , p o we r dissi p a t i o n (w) d r = 200c/w ja 0.1 1 10 100 v , collector-emitter voltage (v) ce fig. 2 typical collector current vs. collector-emitter voltage 1,000 0.001 0.01 0.1 1 10 i, c o lle c t o r c u r r en t (a) c pw = 100ms pw = 10ms pw = 1ms dc pw = 100s 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 3 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 r (t) = r(t) * ja r r = 180c/w ja ja p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.1
dss8110y document number: ds31679 rev. 2 - 2 3 of 5 www.diodes.com october 2010 ? diodes incorporated dss8110y electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 5) collector-base breakdown voltage bv cbo 120 ? ? v i c = 100 a, i e = 0 collector-emitter breakdown voltage bv ceo 100 ? ? v i c = 10ma, i b = 0 emitter-base breakdown voltage bv ebo 5 ? ? v i e = 100 a, i c = 0 collector cutoff current i cbo ? ? ? ? 100 50 na a v cb = 80v, i e = 0 v cb = 80v, i e = 0, t a = 150c collector cutoff current i ces ? ? 100 na v ce = 80v, v be = 0 emitter cutoff current i ebo ? ? 100 na v eb = 4v, i c = 0 on characteristics (note 5) dc current gain h fe 150 150 100 80 ? ? ? ? ? 500 ? ? v v ce = 10v, i c = 1ma v ce = 10v, i c = 250ma v ce = 10v, i c = 500ma v ce = 10v, i c = 1a collector-emitter saturation voltage v ce(sat) ? ? ? ? ? ? 40 120 200 mv i c = 100ma, i b = 10ma i c = 500ma, i b = 50ma i c = 1a, i b = 100ma collector-emitter saturation resistance r ce ( sat ) ? ? 200 m ? i c = 1a, i b = 100ma base-emitter saturation voltage v be ( sat ) ? ? 1.05 v i c = 1a, i b = 100ma base-emitter turn on voltage v be ( on ) ? ? 0.9 v v ce = 10v, i c = 1a small signal characteristics output capacitance c obo ? ? 7.5 pf v cb = 10v, f = 1.0mhz current gain-bandwidth product f t 100 ? ? mhz v ce = 10v, i c = 50ma, f = 100mhz notes: 5. measured under pulsed conditions. pulse width = 300 s. duty cycle 2%. 0 0.2 0.4 0.6 0.8 1.0 1.2 0246810 v , collector-emitter voltage (v) ce fig. 4 typical collector current vs. collector-emitter voltage i, c o lle c t o r c u r r en t (a) c i = 1ma b i = 2ma b i = 3ma b i = 4ma b i = 5ma b 0 100 200 300 400 500 0.001 0.01 0.1 1 10 i , collector current (a) c fig. 5 typical dc current gain vs. collector current t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a h , dc current gain fe
dss8110y document number: ds31679 rev. 2 - 2 4 of 5 www.diodes.com october 2010 ? diodes incorporated dss8110y 0.01 0.1 1 0.001 0.01 0.1 1 10 i , collector current (a) c fig. 6 typical collector-emitter saturation voltage vs. collector current 0.0001 v, c o lle c t o r -emi t t e r saturation ce(sat) voltage (v) t = -55c a i/i = 10 cb t = 25c a t = 85c a t = 125c a t = 150c a 0.001 0.01 0.1 1 10 i , collector current (a) c fig. 7 typical base-emitter turn-on voltage vs. collector current 0.0001 0 0.2 0.4 0.6 0.8 1.2 v , base-emi t t e r t u r n- o n v o l t a g e (v) be(on) 1.0 v = 10v ce t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0.1 1 10 100 1,000 0 0.2 0.4 0.6 0.8 1.0 v , base-emi t t e r sa t u r a t i o n v o l t a g e (v) be(sat) 1.2 i , collector current (ma) c fig. 8 typical base-emitter saturation voltage vs. collector current i = 10 cb /i t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a package outline dimensions sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 typ f 0.40 0.45 h 1.80 2.20 j 0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.22 0 8 all dimensions in mm a m j l d b c h k f
dss8110y document number: ds31679 rev. 2 - 2 5 of 5 www.diodes.com october 2010 ? diodes incorporated dss8110y suggested pad layout important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com dimensions value (in mm) z 2.5 g 1.3 x 0.42 y 0.6 c1 1.9 c2 0.65 x z y c1 c2 c2 g
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